| 摘要 |
The magneto-resistive sensor proposed has a layer system containing at least one measurement layer (2) with a magnetization (M &cir& NOt M), in the plane of the layer, which is reversibly dependent at least in one direction on an applied magnetic field (H &cir& NOt ) and at least one bias layer (6) with a permanent magnetization (M &cir& NOt B) in the plane of the layer, these two layers being interchangeably decoupled from each other by an intermediate layer (4). In order to ensure the magnetostatic decoupling of the measurement layer (2) and the bias layer (6), the measurement layer (2) is shorter, at least in one direction parallel to M &cir& NOt B, than the bias layer (6). The ground-state magnetization (M &cir& NOt MO) of the measurement layer (2) and the magnetization (M &cir& NOt B) of the bias layer (6) are at least approximately orthogonal to each other. This gives a sensor with linear characteristic and maximum sensitivity. |
