| 摘要 |
<p>An electrically programmable nonvolatile semiconductor memory (44) which includes an array of programmable transistor cells, such as EPROM cells, which avoids the use of field oxide islands to provide electrical isolation. The cells are arranged in X number of rows and Y number of columns with the cells in at least two of the rows being designated as select cells and the remaining cells being designated as memory cells. Control circuitry is provided for causing the select cells (46) to supplying programming voltages to selected ones of the memory cells (48). Alternate ones of the select cells are initially programmed to a high threshold (inactive) state so as to provide electrical isolation for adjacent select cells which remain in the low threshold (active) state.</p> |
