| 摘要 |
A method for fabricating single crystal islands (34) on a high temperature substrate (20), thereby allowing for the use of high temperature processes to further make devices incorporating the islands (34) such as, for example, high mobility thin film transistor integrated drivers (13) for active matrix displays (10). The method essentially includes depositing an etch stop layer (30) on a single crystal silicon substrate (18), depositing a single crystal silicon device layer (32) on the etch stop layer (30), bonding a quartz substrate (20) to the single crystal silicon device layer (32) at room temperature, sealing and securing with an adhesive the edges of the single crystal silicon substrate (18), the etch stop layer (30), the single crystal silicon device layer (32) and the quartz substrate (20), grinding away a portion of the silicon substrate (18) and a portion of the adhesive (22), etching away the remaining portion of the silicon substrate (18), removing the remaining portion of the adhesive (22), etching away the etch stop layer (30), applying a photoresist mask on the single crystal silicon device layer (32) for defining the islands (34) on the single crystal silicon device layer (32), etching single crystal silicon islands (34), and the first non-room-temperature process of diffusion bonding the single crystal silicon islands (34) to the quartz substrate (20). |
