A laser electron-beam tube comprises an electron-beam source housed in a vacuum chamber and a laser target. The laser target consists of partially transparent reflecting layers and highly reflecting layers, all accommodated on a substratum; interspersed with these are at least two layers of an active semiconductor material and layers of a passive semiconductor material alternating therewith, with corresponding narrower or wider exclusion zones. The semiconductor materials are crystals whose lattice periods differ in the free state by more than 0.1%. The layers are under elastic tension and have a thickness below the critical thickness.
申请公布号
WO9415353(A1)
申请公布日期
1994.07.07
申请号
WO1993RU00318
申请日期
1993.12.27
申请人
NAUCHNO-PROIZVODSTVENNOE PREDPRIYATIE "PRINCIPIA O;PRINCIPIA OPTICS INC.;KOZLOVSKY, VLADIMIR IVANOVICH;LAVRUSHIN, BORIS MIKHAILOVICH
发明人
KOZLOVSKY, VLADIMIR IVANOVICH;LAVRUSHIN, BORIS MIKHAILOVICH