| 摘要 |
The isolation method includes the steps of depositing polysilicon on a silicon substrate, patterning the polysilicon layer to form an active pattern, forming a side wall on the side of the active pattern, forming a first oxide layer of a predetermined thickness and carrying out ion-implanting, forming a second oxide layer of a predetermined thickness, forming a inter level layer on a second oxide layer to planarize second oxide layer, dry etching the inter level layer and the second oxide layer to form a field oxide layer, thereby reducing the lateral diffusion and improving the electric characteristics.
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