发明名称 WORD LINE DRIVER OF SEMICONDUCTOR MEMORY ARAY AND METHOD OF BIT LINE ARAY
摘要 The circuit consists of some memory cells, wordlines for pointing a row of memory cells, bit lines of pointing a column of memory cells, wordline driver, and sense AMP. The circuit is arranged as follows: wordline driver is divided and arranged four times in one memory cell array at least. One wordline driver is connected with one wordline, the neighboring wordline driver is connected with the other word line. Bit lines make blocks horizontally. A sense amp is located between blocks. One bit line is connected with only one sense amp.
申请公布号 KR940006080(B1) 申请公布日期 1994.07.06
申请号 KR19910013274 申请日期 1991.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MIN, KYONG - YOL
分类号 G11C11/40;(IPC1-7):G11C11/40 主分类号 G11C11/40
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