Procedure for fabricating a pressure transducer using the silicon on isolation technique and transducer thus obtained.

摘要

The procedure of the invention comprises the following steps: a) - making a monocrystalline silicon film (44) on a silicon substrate (6) and separated at least locally from the latter by an insulating layer (42); b) - making an opening (24) in the silicon film down to the insulating layer; c) - partially removing the insulating layer via the said opening in order to form the diaphragm in the silicon film; d) - replugging the said opening (26).