| 摘要 |
Nonvolatile semiconductor memory device includes a semiconductor substrate, a first conductor formed on the substrate and served as a floating gate, a second conductor formed on first conductor and served as a control gate, a third conductor having a side wall spacer structure formed on one side of the stacks of first and second conductor and served as a select gate, wherein first, second and third conductors are connected to each other on a field oxide layer between cells.
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