| 摘要 |
Read only memory structure having spacer includes isolation walls having a predetermined interval formed between a connecting region and standard region, a gate oxide layer formed on a substrate on which memory cell is formed, a gate electrode formed on the side of the isolation walls, a first conductive-type channel regions formed beneath the memory cell adjacent to the connecting region and selected memory cell or oxide layer of the cells, and a second conductive-type channel region formed beneath unselected memory cell or oxide layer of the cells and isolation wall, thereby increasing the channel region and reducing the channel resistance.
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