| 摘要 |
A static random access memory comprises a memory cell array, a plurality of bit lines provided in correspondence to said plurality of memory cell columns, a first decoder for selecting a memory cell column, a second decoder for selecting a memory cell groups included in the selected memory cell column, and a third decoder supplied for selecting a memory cell included in the selected memory cell group. Each memory cell comprises a flip-flop circuit that is formed of thin film transistors. Each memory cell group includes a predetermined number of the memory cells, a sub-bit line extending over the memory cells included in the memory cell group, a first selection circuit connected to the sub-bit line and further to the bit line that corresponds to the selected memory cell group and a second selection circuit connected to the sub-bit line and the bit line that corresponds to the selected memory cell group. The first selection circuit is activated in response to an output signal of the second decoder for causing a voltage change in the bit line in response to a voltage level on the sub-bit line, and comprises bulk transistors having diffusion regions formed in a semiconductor substrate. The second selection circuit comprises a thin film transistor that is turned on in response to a second output signal of the second decoder for connecting the bit line and said sub-bit line electrically.
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