Method for improving stability of tungsten chemical vapor deposition

摘要

A method for cleaning a chemical vapor deposition (CVD) process for depositing tungsten. After the tungsten has been deposited and the wafer has been removed from the chamber, the chamber undergoes an in-situ cleaning process. In the currently preferred embodiment the in-situ cleaning process consists of cleaning the chamber with nitrogen tri-fluoride (NF3) and hydrogen (H2) nitrogen (N2) plasmas. The tungsten CVD cleaning process also includes purging the chamber with the dilute mixture of silane (SiH4), argon (Ar) and nitrogen (N2).