Method for producing silicon dioxide film which prevents escape of Si component to the environment

摘要

PCT No. PCT/JP90/01380 Sec. 371 Date Jun. 23, 1992 Sec. 102(e) Date Jun. 23, 1992 PCT Filed Oct. 25, 1990 PCT Pub. No. WO92/07793 PCT Pub. Date May 14, 1992.A method for producing a silicon dioxide film by contacting a substrate such as glass with a treating liquid comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide to deposit a silicon dioxide film on the surface of the substrate, the method being characterized by providing a device for preventing an Si component from escaping from the treating liquid. According to the method, pollution of working environment and decrease in concentration of solution do not occur during the formation of silicon dioxide film.