发明名称 |
Bipolar doped semiconductor structure and method for making |
摘要 |
A semiconductor structure that provides both N-type and P-type doping from a single dopant source is provided. A first doping region (13) comprising a first material composition includes holes and electrons in a doping energy level (ED)- A first undoped spacer region (12) comprising the first material composition covers the doping region (13). An undoped channel (11,14) comprising a second material composition covers the first spacer region (12) and a second undoped spacer region (12) comprising the first material composition covers the undoped channel (11,14). The first material composition has a wider bandgap than the second material composition and the doping energy level (ED) is selected to provide electrons to the undoped channel (11,14) when the second material composition has a conduction band minimum less than the doping energy level (ED) and to provide holes to the first undoped channel (11,14) when the second material composition has a valence band maximum greater than the doping energy level (ED).
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申请公布号 |
US5326985(A) |
申请公布日期 |
1994.07.05 |
申请号 |
US19920951994 |
申请日期 |
1992.09.28 |
申请人 |
MOTOROLA, INC. |
发明人 |
GORONKIN, HERBERT;SHEN, JUN;TEHRANI, SAIED N. |
分类号 |
H01L29/778;(IPC1-7):H01L29/161;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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