| 摘要 |
There is disclosed a semiconductor device comprising a plurality of lower level interconnections having first, second and third lower level interconnections (23, 25 and 24), an upper level interconnection (34) connected to the first and second lower level interconnections and extending over the third lower level interconnection in spacing relationship, and at least one pier (32) formed on a central portion of the upper surface of one of the first and second lower level interconnections, and the pier has a width less than that of aforesaid one of the first and second lower level interconnections and is covered in its entire surface with a film formed of the same material as of the upper level interconnection, so that a force applied for wafer separation is partially supported by the pier. |
