发明名称 |
Method and apparatus for measuring high-frequency C-V characteristics of a MIS device. |
摘要 |
<p>A method or apparatus for measuring the high-frequency of C-V characteristics of a MIS (e.g. MOS) device (2) is disclosed. The method comprises the steps of placing the device (2) in a shielding-box (3), shielding the device (2) from outside electromagnetic light, illuminating the device with a light of a pre-determined wavelength from a device (6, 9) to prevent induction of excess carriers at the surface of the device (2), applying a voltage of a high frequency to a gate electrode (13) of the device (2), and alternating a sweep direction of the voltage by an apparatus (7). The method and the apparatus accurately measure the capacitance in response to voltages applied to the gate electrode (13). <IMAGE></p> |
申请公布号 |
EP0604233(A2) |
申请公布日期 |
1994.06.29 |
申请号 |
EP19930310503 |
申请日期 |
1993.12.23 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
FUJIMAKI, NOBUYOSHI, SHIN-ETSU HANDOTAI CO.LTD. |
分类号 |
G01R31/26;(IPC1-7):G01R31/26;G01R31/28 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|