| 摘要 |
<p>A complementary conductive device, such as a complementary transistor pair includes first and second overlying conductive channels (2, 3) in a substrate (1). Individual connections (4, 5, 6, 7) and (4, 5, 6, 8) are provided to the channels. A common gate structure consists of a conductive region (14) extending downwardly into the substrate to form a connection to both of the layers, and a barrier region (13) separates the regions (2a, 3a) that are connected to gate contact region (14) from the channels. the gate structure produces complementary charges in the channels.</p> |
