发明名称 |
FORMATION OF MICROMINIATURE STRUCTURE AND X-RAY MASK |
摘要 |
<p>PURPOSE:To form a micromiature structure having high aspect ratio by employing a resist mainly composed of a copolymer of a unit shown by a specific formula and a unit shown by another specific formula in a resist layer thereby forming a resist pattern deep in vertical direction in a short exposing time. CONSTITUTION:When a resist layer is formed on the surface of a substrate or a solid body, a monomer shown by formula I (where, R1 represents an 1-4C alkyl group (hydrogen atom in alkyl group may be substituted by halogen atom)) and a monomer shown by formula II (where, X represents halogen atom or hydroxyl group and R2 represents hydrogen atom or methyl group) are previously polymerized to prepare a copolymer syrup thereof. The copolymer syrup is applied onto a substrate or the surface of a solid body. A copolymer syrup layer thus formed on the substrate or the surface of solid body is then polymerized completely through polymerization completing process.</p> |
申请公布号 |
JPH06181170(A) |
申请公布日期 |
1994.06.28 |
申请号 |
JP19930066676 |
申请日期 |
1993.03.25 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
OGINO SEIJI;NUMAZAWA TOSHIYUKI |
分类号 |
B81C1/00;G03F1/22;G03F7/039;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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