| 摘要 |
PURPOSE:To prevent recrystallization of optically pumped carriers and to improve open voltage and hole carrier range by a method wherein the content of hydrogen of i-type layer is smoothly changed in layer thickness direction, and an RF-doping layer and MW-doping layer are arranged in such a manner that the i-type layer is sandwiched by them. CONSTITUTION:An MW-type layer 102 with n-type conductivity is formed on a substrate 101 by an MWPCVD method, and an RFn-type layer 103 with n-type conductivity is formed in multilayer on the layer 102 by an RFPCVD method. Besides, an RF p-type layer 105 is formed in multilayer by an MWPCVD method in such a manner that the hydrogen-containing i-type layer 104 is sandwiched by them, an MW p-type layer 106 is formed in multilayer by an MWPCVD method. A transparent electrode 107 and a current-collecting electrode 108 are formed on the MW p-type layer 106. As a result, the decrease in photoelectric conversion efficiency can be suppressed, and the deposition rate of the photovoltaic device can be increased. |
