发明名称 |
Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same |
摘要 |
In a turn off type semiconductor device, an n-type emitter layer is divided into a plurality of elements by trenches. A silicide layer of a high melting point metal is provided on a p-type layer adjacent to the individual elements of the n-type emitter layer on a bottom of each of the trenches. A gate electrode is provided on the associated silicide layer so as to surround the plurality of elements of the n-type emitter layer obtained by the division of the emitter layer. An insulator is filled in each of the trenches dividing the n-type emitter layer surrounded by the gate electrode. A cathode electrode is provided on both the insulators and the n-type emitter layer.
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申请公布号 |
US5324967(A) |
申请公布日期 |
1994.06.28 |
申请号 |
US19910742833 |
申请日期 |
1991.08.08 |
申请人 |
HITACHI, LTD. |
发明人 |
HONMA, HIDEO;SATOU, YUKIMASA;MURAKAMI, SUSUMU;YATSUO, TSUTOMU;SANPEI, ISAMU;YAGISHITA, KENJI |
分类号 |
H01L21/28;H01L29/423;H01L29/45;H01L29/74;H01L29/744;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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