发明名称 |
Method of operating a semiconductor laser as a bistable opto-electronic component |
摘要 |
A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing charge carrier density in at least one of the regions so that it emits light at one of a first wavelength and a second wavelength in correspondence with the charge carrier density change.
|
申请公布号 |
US5325387(A) |
申请公布日期 |
1994.06.28 |
申请号 |
US19920980958 |
申请日期 |
1992.11.24 |
申请人 |
ALCATEL N.V. |
发明人 |
BAUMS, DIETER;SCHILLING, MICHAEL;IDLER, WILFRIED;LAUBE, GERT;WUENSTEL, KLAUS;HILDEBRAND, OLAF |
分类号 |
H01S5/00;G02F3/02;H01S3/106;H01S5/0625;H01S5/10;H01S5/40;(IPC1-7):H01S3/10 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|