发明名称 |
Phonon controlled conductivity device |
摘要 |
A controlled conductivity device utilizes incident phonons (1) to control conductivity. A body of material (2) is capable of changing its conductivity in response to the incident phonons by undergoing a metal-insulator transition.
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申请公布号 |
US5324976(A) |
申请公布日期 |
1994.06.28 |
申请号 |
US19920964694 |
申请日期 |
1992.10.22 |
申请人 |
HITACHI, LTD. |
发明人 |
WILLIAMS, DAVID A. |
分类号 |
H01L39/16;H01L29/66;H01L39/22;H01L49/00;H03H9/145;(IPC1-7):H01L29/66;H01L29/96 |
主分类号 |
H01L39/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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