发明名称 Phonon controlled conductivity device
摘要 A controlled conductivity device utilizes incident phonons (1) to control conductivity. A body of material (2) is capable of changing its conductivity in response to the incident phonons by undergoing a metal-insulator transition.
申请公布号 US5324976(A) 申请公布日期 1994.06.28
申请号 US19920964694 申请日期 1992.10.22
申请人 HITACHI, LTD. 发明人 WILLIAMS, DAVID A.
分类号 H01L39/16;H01L29/66;H01L39/22;H01L49/00;H03H9/145;(IPC1-7):H01L29/66;H01L29/96 主分类号 H01L39/16
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