| 摘要 |
In CCD's, the major part of the dark current is caused by surface states. This dark current is disturbing, especially in image sensors, because the sensitivity of the camera is limited thereby. When according to the invention the integrating gates are varied periodically, the subjacent surface parts of the - buried - channel being brought periodically into inversion and into depletion, while maintaining the charge-containing capacity, a considerable reduction of the dark current can be obtained. In image sensors, voltage variation preferably occurs during the fly-back time.
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