| 摘要 |
SOLID STATE OVERCURRENT PROTECTION DEVICE A solid state overcurrent protection device for use with an external current sensing impedance comprises a semiconductor body having a first region of a first conductivity type; a second region vertically adjacent to the first region, the second region being of a second conductivity type opposite to the first conductivity type; a third region vertically adjacent to the second region, the third region being of the first conductivity type; fourth and fifth regions vertically adjacent to the third region, the fourth and fifth regions being horizontally adjacent to and interdigitated with one another, and being of the first and second conductivity types respectively; interdigitated gate and cathode contacts to the fourth and fifth regions respectively, the cathode contact also being locally connected to a portion of the fourth region; and an anode contact to the first region. The semiconductor body may also have sixth and seventh regions vertically adjacent to the first region, the sixth and seventh regions being horizontally adjacent to one another and being of the first and second conductivity types respectively; and the anode contact to the first region may be made through the sixth region, the anode contact also being connected to the seventh region. The overcurrent protection device is particularly useful for protection of line interfaces in telecommunications switching equipment.
|
