发明名称 |
Method for the improved microwave deposition of thin films |
摘要 |
An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.
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申请公布号 |
US5324553(A) |
申请公布日期 |
1994.06.28 |
申请号 |
US19930089207 |
申请日期 |
1993.07.09 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
OVSHINSKY, STANFORD R.;TSU, DAVID V.;YOUNG, ROSA |
分类号 |
C23C16/511;C23C16/517;H01J37/32;(IPC1-7):B05D3/06 |
主分类号 |
C23C16/511 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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