发明名称 |
Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan |
摘要 |
Semiconductor devices containing one or more layers of polycrystalline silicon having a root means square roughness of not more than 20 angstroms are made by forming the silicon layers in the amorphous state by low pressure chemical vapor deposition in the temperature range 560-580 DEG C and annealing to convert them to the polycrystalline state. The layers so formed are superior in smoothness lack of strain and precision of photolithographic definition to layers of silicon formed in the polycrystalline state. An interconnect 24 may be produced. <IMAGE> |
申请公布号 |
SE500463(C2) |
申请公布日期 |
1994.06.27 |
申请号 |
SE19830006070 |
申请日期 |
1983.11.04 |
申请人 |
RCA CORPORATION |
发明人 |
ALOIS ERHARD *WIDMER;GUNTHER *HARBEKE;LISELOTTE *KRAUSBAUER;EDGAR FELIX *STEIGMEIER |
分类号 |
H01L27/04;H01L21/20;H01L21/205;H01L21/3205;H01L21/321;H01L21/822;H01L21/8238;H01L27/08;H01L27/092;H01L29/78;(IPC1-7):H01L29/04;H01L21/320 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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