| 摘要 |
PURPOSE:To reduce a unit work time by cleaning a film formation chamber which was used for a doped film formation of a p-i-n junction by a method such as the same operation as an intrinsic semiconductor film formation. CONSTITUTION:A susceptor 2 whereon a substrate 1 is mounted is carried to a first film formation chamber 12, and a first p-i-n junction p-layer 21, a p/i interface layer 22, an i-layer 23, an n-layer 24, a second p-layer 25 and a second p/i interface layer 26 are formed one by one. Then, the susceptor 2 is carried to a second film formation chamber 13 and a second i-layer 27 and a second n-layer 28 are formed one by one. After the susceptor 2 is carried to an unloading chamber 14, an interior of the second film formation chamber 13 is cleaned by the same operation as film formation of an intrinsic a-Si film in the second film formation chamber 13 wherein a substrate does not exist. Impurities can be prevented from being included when an intrinsic thin film is formed on a following substrate which is carried in. |
