| 摘要 |
PURPOSE:To obtain an auxiliary material for formation of a resist pattern to form a water-soluble org. film which causes no intermixing in the interface with a photoresist layer by compounding a specified saccharide into the material. CONSTITUTION:This auxiliary material for formation of a resist pattern is used to form a water-soluble org. film which is to be removed after exposure on a photoresist layer. In this material, a saccharide of <=1500mol.wt. is compounded. As for the saccharide of <=1500mol.wt., monosaccharide and oligosaccharide are used. As for the monosaccharide, ketose such as glyceraldehyde and erythorose is used, and as for oligosaccharide, malto- oligosaccharide, isomalto-oligosaccharide, etc., is used. The water-soluble org. film is, for example, a water-soluble interlayer 6 to be formed between a contrast enhancing photodecoloring org. film 7 and a photoresist layer 2, or a water-soluble antireflection layer. In this method, the saccharide of <=1500mol.wt. is preferably included by 1-20wt.% in the water-soluble org. films. |
