| 摘要 |
PURPOSE:To satisfy both planarization of contact holes on a semiconductor substrate and subsequent planarization of an interlayer film while preventing microminiaturization of Al crystal particle in an Al alloy film formed on a barrier unetal layer and lowering electromigration resistance. CONSTITUTION:An Al alloy wiring material 4 is deposited by 8000Angstrom thick through high temperature bias sputtering at 450 deg.C on a silicon substrate 1 provided with a barrier metal layer 2 having a contact hole 3 thus filling the contact hole 3 and planarizing the surface. The Al alloy layer 4 is then etched back by RIE, for example, to 4000Angstrom thick which causes no trouble in planarization of interlayer film and a wiring pattern is baked through lithographic process followed by formation of a wiring 5 by RIE. This method allows filling of contact hole and planalization of interlayer film through high temperature sputtering of Al at such thickness as causing no trouble in planarization of interlayer film.
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