| 摘要 |
PURPOSE:To increase the surface area of a storage electrode for obtaining a large capacitance, by constituting the storage electrode of an inner wall part surrounding the contact part with a MOS transistor, a bottom part continuous with the inner wall part, and an outer wall part. CONSTITUTION:Resist layer 38 is applied to a mask, and polycrystalline silicon films 37, 38 are selectively etched and eliminated. Thereby a part of the upper surface of a ring type SiO2 film 34A is exposed, and in the inside, a side wall of the polycrystalline silicon films, i.e., an inner wall part 40a of a storage electrode is formed. The resist layer 38 is applied to a mask, only the ring type SiO2 film 34A is selectively eliminated by wet etching. As the result of the etching, a cavity 41 is formed, and an inner wall part 40a, a bottom surface part 40b, and an outer wall part 40c which constitute a storage electrode are formed by the polycrystalline silicon film 37. An upper end stretching part 40d which is bent and stretches from the upper end of the outer wall 40c toward the inner wall part 40a side is formed. |
