| 摘要 |
<p>PURPOSE:To manufacture a field emission electron source of good uniformity in good yields by flattening the end of a projecting cold cathode, and forming an electron releasing portion into an edge portion around the flat surface of the end of the cold cathode. CONSTITUTION:A thermally oxidized silicon layer 15 is formed by them oxidation of the surface of a silicon substrate 11, and e.g. a circular pattern is formed on the surface of the layer 15 using resist and the thermally oxidized silicon layer 15 is etched to form a thermally oxidized silicon mask 15a. Then the surface of the substrate 11 is isotropically dry etched to form a projecting portion 11a in the form a cone projecting from the substrate 11 and a thermally oxidized silicon layer 12a is developed by thermal oxidation. The substrate 11 is disposed inside a vacuum deposition device and an insulating layer 13 and a gate electrode layer 14 are vacuum deposited on the substrate 11 in sequence and then the unnecessary thermally oxidized silicon mask 15a and part of the thermally oxidized silicon layer 12a are removed. A field emission electron source is thus manufactured in good yields and with good uniformity while depending less on manufacturing processes than in conventional methods.</p> |
