| 摘要 |
<p>PURPOSE:To simplify a structure and to improve display characteristics by forming signal electrodes and display electrodes by using the same thin films and constituting storage capacitors by using a part of the display electrodes. CONSTITUTION:Picture elements are constituted by forming signal wirings 1 and the display electrodes 3 for which transparent electrodes are used by using the transparent conductive films of indium oxide, tin oxide, etc. The two drain electrodes 6 and one source electrode 5 of a TFT are also simultaneously formed in a part of the signal wirings 1 at this time. A silicon semiconductor film, an insulating film consisting of a silicon nitride or silicon oxide thin film and metallic thin films consisting of aluminum, chromium, tantalum, etc., are then successively formed and the metallic thin films consisting of the aluminum, chromium, tantalum, etc., the insulating film consisting of the silicon nitride or silicon oxide thin film and the silicon semiconductor film are successively patterned in a second patterning process, by which the scanning wirings 2 are formed. A part of the previously display electrodes 3 and the scanning wirings 2 are superposed on each other to form the storage capacitor parts 4. Then, the TFTs having a positive stagger structure are formed.</p> |
