| 摘要 |
PURPOSE:To etch a silicon series material (single crystalline Si, poly-Si, high melting point metal silicide, etc.) in a tapered manner with high yield. CONSTITUTION:After a poly-Si layer 14 is deposited on an insulating film 12 covering a surface of a semiconductor substrate 10, a resist layer 16 having a desired pattern is formed thereon. The layer 14 is dry etched by plasma etching with the layer 16 as a mask. In the case of the plasma etching, gas of halide of Al (AlCl3, AlBr3, etc.) is introduced into an etching reaction chamber or Al for constituting an inner wall of the chamber, electrodes, etc., is reacted with Cl, Br, etc., in the gas to generate halide of the Al to etch while adhering halogenated Al films 18a, 18b to sidewalls of the layer 14. The layer 14 is so etched in a tapered state that its thickness is increased toward a lower part. The halide of the Al can be simply removed.
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