| 摘要 |
PURPOSE:To provide a semiconductor device with good heat dissipation effi ciency and high productivity by preventing a DH junction part from electrically shortcircuiting by Ag paste without performing half dicing for a DH wafer, without forming an insulating film by using a sputtering method and without shaping a window in the insulation film by using a photoetching method. CONSTITUTION:In a semiconductor (light emitting diode) device which is composed of clad layers 2, 3 of at least two layers and an active layer 1 of at least one layer arranged between the clad layers 2, 3, a side surface of the active layer 1 is arranged and positioned in an inner side of a side surface of the clad layers 2, 3. |
