| 摘要 |
PURPOSE:To provide a manufacturing method of a thin-film limiting current type oxygen sensor capable of obtaining the superior limiting current characteristic. CONSTITUTION:A mixture paste of a crystalline glass and a high melting point insulator material is applied to a fine insulator substrate 11 to be turned so that a porous gas diffusion layer 12, on which Pt cathode electrodes 13 are provided, is formed. On the substrate provided with the cathode electrodes, a ZrO2-Y2O3 film 14 and Pt anode electrodes 15 are formed, thereby obtaining a thin-film limiting current type oxygen sensor. |
