| 摘要 |
<p>PURPOSE: To provide a current sensing circuit providing a current/voltage converter being superior in conversion speed from current to a voltage. CONSTITUTION: The current sensing circuit of a semi-conductor memory device is provided with a current sense amplifier 46 connected to a memory cell and a data line MDL and a bar MDL which are connected to the output end of the current sense amplifier 46. It is also composed of loading means 50 and 51 which are provided between a power source voltage VDD end and an output mode SAC and a bar SAC so as to be controlled by a block selecting signal MSi, driving means 52 and 53 which are provided between the data line MDL, the bar MDL and the output node SAC, the bar SAC so as to voltage-amplify current difference between the data line MDL and the bar MDL and pull-down means 54 and 55 which are connected to the data line MDL and the bar MDL.</p> |
