| 摘要 |
PURPOSE:To provide a storage cell which is stable and hardly causes soft errors even at low voltage in relation to a semiconductor memory circuit device required for low voltage operation with the miniaturization of storage cells. CONSTITUTION:Within the semiconductor memory circuit device having a static storage cell, a part of driving MOSFETs T3, T4 out of the MOSFETS comprising a storage cell is structured to be overlapped with a part of conductive layers 5 connected to a source region 1 or a drain region 1 so as to increase the capacity of a storage node. Through these procedures, the memory circuit device hardly making a soft error even at low voltage can be provided. |
