| 摘要 |
PURPOSE:To dissolve troubles with regard to a P-N junction diode and a Schottky-junction diode and to provide a high breakdown voltage, high speed switching and low noise Schottky barrier diode. CONSTITUTION:A Schottky barrier diode is constituted into such a structure that P-N junctions J and Schottky junctions are alternately arranged on one surface of an N-type semiconductor substrate 1 and the P-N junctions, which are adjoined each other at the time of zero bias directly under the Schottky junctions, are overlapped with each other by a depletion layer and at the same time, the impurity concentration of an N-type semiconductor layer (a second epitaxial layer) 7 forming the Schottky junctions is made lower than that of an N-type internal semiconductor layer (a first epitaxial layer) 2 and the layer 7 is formed into a high-resistance layer. |
