| 摘要 |
<p>PURPOSE:To prevent cations from reaching a main surface of an element forming region from an end face of an oxide insulating film between a support board and a semiconductor layer at an outer peripheral side of a semiconductor substrate and to improve electric reliability of a semiconductor integrated circuit device. CONSTITUTION:An element forming region 4C formed of a semiconductor base 1 of a laminated structure of a semiconductor layer 4 via a first oxide insulating film 3 and specified at a periphery by a groove 3 reaching the film 3 from a main surface of the layer 4 toward a depth direction at the layer 4 of the base 1 is formed on a support board 2. A semiconductor integrated circuit device in which the region 4C is electrically isolated from the other region via the film 3, a second oxide insulating film 9 buried in a groove 8 and a third oxide insulating film 7 formed on the main surfaces of the layer 4 comprises a nonpermeable film 17A, etc., for cation to be provided on an end face of the film 3 at an outer peripheral side of the base 1.</p> |
