| 摘要 |
PURPOSE:To provide a positive type resist material for exposure with high energy beams having high sensitivity, high resolution and excellent applicability to a process. CONSTITUTION:This positive type resist material contains polyhydroxystyrene (A), a dissolution inhibitor (B) and an onium salt (C). The dissolution inhibitor B is a mixture of two or more among cresolphthalein, phenolphthalein, thymolphthalein and a compd. obtd. by substituting a t-butoxycarbonyloxy group for at least part of the OH groups in bisphenol A. The onium salt C is represented by a formula (R)nAM [where R is an optionally substd. arom. group, A is S or I, M is a p-toluenesulfonate or trifluoromethanesulfonate group and (n) is 2 or 3]. The weight ratio of A:B:C is <=0.55:(0.07 to 0.40):(0.005 to 0.15), (A+B+C=1). |
