| 摘要 |
PURPOSE: To provide a CVD process for forming an epitaxial semiconductor layer, in which a rear earth is doped on a substrate. CONSTITUTION: Silane or germane in a gaseous phase and a rare-earth compound are used in this method. The rare earth is doped, and a single-phase semiconductor layer which is supersaturated in the rare earth is formed. Erbium is used preferably for the rare earth, and erbium hexafluoroacetylacetoneto, acetylacetoneto, and tetramethylheptanegeoneto, and fluorooctanegeoneto are used as a preferable precursor for adhering erbium by a CVD.
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