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发明名称
FABRICATION OF INSULATED GATE FIELD-EFFECT TRANSISTOR
摘要
申请公布号
JPH06177148(A)
申请公布日期
1994.06.24
申请号
JP19920328145
申请日期
1992.12.08
申请人
SONY CORP
发明人
NOGUCHI TAKASHI
分类号
H01L21/265;H01L21/266;H01L21/336;H01L29/78;(IPC1-7):H01L21/336;H01L29/784
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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