Verfahren zur Herstellung einer Halbleitervorrichtung mit einem keramischen Substrat und einem integrierten Schaltungskreis

摘要

A semiconductor device includes a circuit pattern of a conductive thin film formed on a ceramic substrate by means of an etching, and an IC chip connected to the etched circuit pattern through a gang-bonding in which respective pads of conduction parts of the circuit pattern and of the IC chip directly contact with each other. The circuit pattern can be thereby provided densely, and contributive to a higher integration of the IC chip.