Verfahren zur Erzeugung eines Durchkontaktstiftes in einem Halbleiterbauelement

摘要

A method for forming a via contact plug using a selective CVD tungsten, tungsten (14) is deposited on a lower portion of a via contact by performing an H2 reduction processing at a high temperature of at least 350 DEG C, and then a further tungsten (16) is deposited on the initially formed tungsten (14) by performing a SiH4 reduction processing at a low temperature of 300 DEG C or less. The via contact is filled with the initial and further tungsten (14 and 16), thereby to form the contact plug. Thus, selectivity of the tungsten is prevented, thereby to achieve a reliable semiconductor device. <IMAGE>