| 摘要 |
PURPOSE:To decrease an element-occupied area as compared with that of substituting MOS transistor by utilizing a part of semiconductor film on an insulated substrate for load resistance. CONSTITUTION:A phosphorus ion is injected selectively in a channel domain 6 and a resistor domain 9 of a p-type Sifilm 2 on a sapphire substrate 1, and a critical voltage and a resistance value of MOS transistor are properly set. Next, a gate oxidized film 7 and a poly-Si gate 8 are formed, and a hot oxidized film 10 and an Si3N4 film 11 are built up selectively on a resistor domain 9. Next, n-type source and drain domains 3, 4 and a power wiring 5 are formed through hot diffusion of phosphorus. Processes follow then as covering with SiO2 12, opening to set an electrode wiring 14, covering with SiO2 15. A device occupying an extremely small area and connected with load resistance is thus obtainable. |
