| 摘要 |
RF performance measurements are performed on basic transistors (11) of a microwave monolithic integrated circuit while it is being fabricated. The cicuitry necessary to assess the performance potential at the frequency and power levels of interest is provided by incorporating matching elements (23, 24) onto RF probes (12, 13) used for in-process tests. The RF performance potential of monolithic integrated circuits is being measured at an early stage in the process before expensive process sequence has been completed. The transistors are measured with an RF probe (12, 13) that has RF matching circuitry (23, 24) included as an integral part of the probe (12, 13). Consequently, the performance potential of circuits on the wafer is assessed at the earliest possible point in the manufacturing process. <IMAGE> |
