发明名称 |
Substituted silicon nitride material and method of production thereof. |
摘要 |
Substituted silicon aluminium oxynitrides are made electrically conductive by inclusion of titanium nitride at low levels, eg 15-38 vol%, by inclusion of titanium dioxide and in situ conversion thereof to titanium nitride which is contained in an intergranular phase. Further improvements in conductivity can be achieved by converting the intergranular phase from a glassy state to a crystalline state. |
申请公布号 |
EP0337668(B1) |
申请公布日期 |
1994.06.22 |
申请号 |
EP19890303435 |
申请日期 |
1989.04.07 |
申请人 |
COOKSON SYALONS LIMITED |
发明人 |
LUMBY, ROLAND JOHN;RAJPUT, RAJ KUMAR |
分类号 |
C04B35/584;C01B21/082;C04B35/597;H01B1/06 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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