METHOD OF MAKING SEMICONDUCTOR DEVICE USING ION IMPLANTATION

摘要

The method manufactures a high voltage semiconductor by using field ion injection process so that breakdown voltage is raised and non-active layer is made thinner. The method comprises the steps of: (a) forming a buried layer (2) on a substrate; (b) forming an epitaxial layer (3) on the whole substrate including the buried layer; (c) forming an isolation layer (4) by diffusing an extrinsic material; (d) forming a field region by injecting the extrinsic material; (e) forming emitter region by diffusing the extrinsic material; and (f) forming contact regions and connecting bond wires.