| 摘要 |
<p>The invention relates to a method of manufacturing an optoelectronic semiconductor device whereby two comparatively thin layers are provided next to one another on a substrate by means of a non-selective growing process, an etching process, and a selective growing process, a cladding layer being present over said thin layers. In the known method, first the one thin layer and the cladding layer are grown, the latter is locally removed, and the other thin layer and the cladding layer are then grown in that position. This method has the disadvantage that unevennesses (steps or openings) often arise at the surface of the layer structure above the transition between the thin layers. A method according to the invention is characterized in that in a first non-selective growing process the one layer and a small portion of the cladding layer are provided, these layers are locally removed in the etching process, and the other thin layer and a small portion of the cladding layer are provided in that location in the selective growing process, after which in a second non-selective growing process the major portion of the cladding layer is provided. The layer structure obtained has a substantially plane surface which is free from defects and is very suitable for further processing. The thin layers may be, inter alia, an active and a radiation-guiding layer. According to the invention, especially devices having a mesa structure can be manufactured with a high accuracy and yield.</p> |
