发明名称 |
Semiconductor laser with optimum resonator. |
摘要 |
<p>A semiconductor laser and an optical device employing the semiconductor laser are described. The semiconductor laser comprises and activating layer; first and second cladding layers for sandwiching the activating layer, the energy gaps of which are greater than that of the activating layer; a current blocking layer provided in contact with both sides of the activating layer; a first electrode electrically connected to the first cladding layer; and a second electrode electrically connected to the second cladding layer. The activating layer has a structure that the activating layer is two-dimensionally confined within the first cladding layer, the second cladding layer, and the current blocking layer, reflectivity of at least on end face of a resonator of the activating layer is less than, or equal to 5%, and loss in the resonator of the activating layer is higher than, or equal to 100 cm<-><3>. <IMAGE></p> |
申请公布号 |
EP0602603(A2) |
申请公布日期 |
1994.06.22 |
申请号 |
EP19930120145 |
申请日期 |
1993.12.14 |
申请人 |
SONY CORPORATION |
发明人 |
NARUI, HIRONOBU, C/O SONY CORPORATION;DOI, MASATO, C/O SONY CORPORATION;SAHARA, KENJI, C/O SONY CORPORATION;MATSUDA, OSAMU C/O SONY CORPARATION |
分类号 |
H01S5/00;H01S5/028;H01S5/065;H01S5/10;H01S5/227;H01S5/323;(IPC1-7):H01S3/19;H01S3/085 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|