发明名称 |
SENSE AMPLIFIER OF THE DRAM |
摘要 |
The sense amplifier for use in a dynamic random access memory (DRAM) is disclosed. In a DRAM having a precharging and equalizing circuit for precharging and equalizing first and second bit lines, an NMOS latch connected to a first NMOS transistor of a first conductivity, and a PMOS latch, the sense amplifier includes a second NMOS transistor of a first conductivity having a drain and a source connected between the first NMOS transistor and a ground voltage, and a bipolar transistor having a base connected to a connection node between the first and second NMOS transistors, an emitter (or collector) connected to the ground voltage and a collector (or emitter) connected to a connection node between the first NMOS transistor and the NMOS latch. Thus, a stable limited voltage swing operation is obtained.
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申请公布号 |
KR940005686(B1) |
申请公布日期 |
1994.06.22 |
申请号 |
KR19910006087 |
申请日期 |
1991.04.16 |
申请人 |
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM, HWAN - YONG;KIM, TAE - HYONG;KIM, DAE - SUN;SONG, WON - SHOL;KIM, DAE - YONG |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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